SIA533EDJ-T1-GE3
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Краткое описание:
N/P-Channel 12V MOSFET, 4.5A, 34mR Rds On, SMT
Дополнительная информация
N- and P-channel MOSFET, designed for surface mount applications. Features a 12V drain-to-source voltage (Vdss) and a continuous drain current (ID) of 4.5A. Offers a low drain-source on-resistance (Rds On) of 34mR maximum. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 7.8W. Packaged in tape and reel for automated assembly.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.000988oz |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 34mR |
| Nominal Vgs | 400mV |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 420pF |
| Number of Channels | 2 |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 7.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 48mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 34MR |
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