SIA811ADJ-T1-GE3

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SIA811ADJ-T1-GE3 - Vishay(Siliconix)
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Краткое описание: P-CH MOSFET 20V 4.5A 116mR SOT-23
Производитель Vishay(Siliconix)
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

P-channel MOSFET, 20V Vdss, with a continuous drain current of 4.5A and a maximum power dissipation of 6.5W. Features low on-resistance of 116mR (Rds On Max) and 165mR (Drain to Source Resistance). Designed for surface mount applications with a compact 2.05mm x 2.05mm x 0.75mm footprint. Operates across a wide temperature range from -55°C to 150°C, with fast switching characteristics including turn-on delay of 15ns and fall time of 10ns.
RoHS Compliant
Mount Surface Mount
Width 2.05mm
Height 0.75mm
Length 2.05mm
Series LITTLE FOOT®
Weight 0.000988oz
Polarity P-CHANNEL
Fall Time 10ns
Packaging Tape and Reel
Rds On Max 116mR
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 345pF
Number of Channels 1
Turn-On Delay Time 15ns
Radiation Hardening No
Turn-Off Delay Time 20ns
Max Power Dissipation 6.5W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 165mR
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 4.5A
Drain to Source Voltage (Vdss) 20V

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