SIA906EDJ-T1-GE3
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Краткое описание:
2 N-CH JFET 20V 4.5A 46mR TSSOP SMT
Дополнительная информация
N-Channel TrenchFET® MOSFET, 20V Drain-Source Voltage, 4.5A Continuous Drain Current. Features 46mΩ Max Drain-Source On Resistance and 7.8W Max Power Dissipation. Operates across a -55°C to 150°C temperature range. This surface mount component utilizes a TSSOP package with dimensions of 2.05mm length and 2.05mm width, standing 0.75mm high. Includes 2 N-Channel FETs with 350pF input capacitance and fast switching times (5ns turn-on, 15ns turn-off, 12ns fall time).
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.05mm |
| Height | 0.75mm |
| Length | 2.05mm |
| Series | TrenchFET® |
| Weight | 0.000988oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 46mR |
| Package/Case | TSSOP |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 350pF |
| Number of Channels | 2 |
| Turn-On Delay Time | 5ns |
| Turn-Off Delay Time | 15ns |
| Max Power Dissipation | 7.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 46mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 46mR |
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