SIA910EDJ-T1-GE3
Производится
Увеличить
Краткое описание:
Dual N-Channel JFET, 12V, 4.5A, 28mR Rds(on), Surface Mount
Дополнительная информация
Dual N-Channel Junction Field-Effect Transistor (JFET) designed for surface mount applications. Features a 12V Drain to Source Voltage (Vdss) and a continuous drain current (ID) of 4.5A. Offers a low Drain to Source On Resistance (Rds On) of 23mR, with a maximum of 28mR. Operates within a temperature range of -55°C to 150°C and supports a maximum power dissipation of 7.8W. Includes fast switching characteristics with a fall time of 12ns and turn-on delay of 10ns. Packaged in tape and reel for automated assembly.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.000988oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 28mR |
| Nominal Vgs | 400mV |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 455pF |
| Threshold Voltage | 400mV |
| Number of Channels | 2 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 7.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 23mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 28MR |
