SIA914ADJ-T1-GE3
Производится
Увеличить
Краткое описание:
20V 4.5A Dual N-Ch MOSFET, 43mR RdsOn, PowerPAK SC-70-6
Дополнительная информация
Dual N-Channel MOSFET featuring 20V drain-source voltage and 43mΩ drain-source resistance at 10V gate-source voltage. Offers 4.5A continuous drain current and 7.8W maximum power dissipation. Surface mountable in a PowerPAK SC-70-6 dual package, this RoHS compliant component operates from -55°C to 150°C with fast switching characteristics including a 7ns turn-on delay and 5ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.000988oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 43mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 470pF |
| Power Dissipation | 1.9W |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 7.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 47mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Voltage (Vdss) | 20V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
