SIA915DJ-T1-GE3

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SIA915DJ-T1-GE3 - Vishay(Siliconix)
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Краткое описание: P-CH MOSFET 30V 4.5A 87mR SC Surface Mount
Производитель Vishay(Siliconix)
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

P-channel MOSFET with a -30V drain-source voltage and -4.5A continuous drain current. Features low 87mΩ drain-to-source resistance at 10V Vgs. Offers 6.5W maximum power dissipation and operates across a -55°C to 150°C temperature range. Surface mountable in an SC package, this component is RoHS compliant and supplied on tape and reel.
RoHS Compliant
Mount Surface Mount
Series TrenchFET®
Weight 0.000988oz
Polarity P-CHANNEL
Fall Time 10ns
Packaging Tape and Reel
Rds On Max 87mR
Nominal Vgs -1V
Package/Case SC
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 275pF
Threshold Voltage -1V
Number of Channels 2
Turn-On Delay Time 35ns
Radiation Hardening No
Turn-Off Delay Time 15ns
Reach SVHC Compliant Unknown
Max Power Dissipation 6.5W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 87mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) -4.5A
Drain to Source Voltage (Vdss) -30V

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