SIA923EDJ-T1-GE3
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Краткое описание:
Dual P-Channel JFET, 20V, 4.5A, 54mR Rds On, Surface Mount
Дополнительная информация
Dual P-channel JFET with 20V drain-source voltage (Vdss) and 4.5A continuous drain current (ID). Features low 54mR drain-source on-resistance (Rds On Max) and 7.8W maximum power dissipation. Operates from -55°C to 150°C, with fast switching speeds including 15ns turn-on and 30ns turn-off delay times. Surface mountable in tape and reel packaging, this RoHS compliant component offers efficient power management.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.000988oz |
| Polarity | P-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 54mR |
| Nominal Vgs | -500mV |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 1.9W |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 7.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 54mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 54mR |
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