SIA929DJ-T1-GE3
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Краткое описание:
P-CHANNEL MOSFET 2-Channel 30V 4.5A 64mR Surface Mount
Дополнительная информация
The SIA929DJ-T1-GE3 is a P-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 7.8W and is RoHS compliant. The device features a continuous drain current of 4.5A and a drain to source resistance of 64mR. It is available in a surface mount package and is suitable for high-temperature applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.000988oz |
| Polarity | P-CHANNEL |
| Fall Time | 10ns |
| Packaging | Tape and Reel |
| Rds On Max | 64mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 575pF |
| Number of Channels | 2 |
| Turn-On Delay Time | 5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 22ns |
| Max Power Dissipation | 7.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 64mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Voltage (Vdss) | 30V |
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