SIB404DK-T1-GE3
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Краткое описание:
N-Channel MOSFET, 12V, 9A, 19mR RdsOn, SC Package
Дополнительная информация
N-channel MOSFET transistor featuring a 12V drain-source voltage and 9A continuous drain current. Offers a low 19mΩ drain-source on-resistance at a 4.5V gate-source voltage. Designed for surface mounting in an SC package, this component boasts a 5ns turn-on delay and 20ns fall time. Maximum power dissipation is 13W, with operating temperatures ranging from -55°C to 150°C. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 19mR |
| Package/Case | SC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Threshold Voltage | 350mV |
| Number of Channels | 1 |
| Turn-On Delay Time | 5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 13W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 19mR |
| Gate to Source Voltage (Vgs) | 5V |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 19mR |
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