SIB408DK-T1-GE3
Производится
Увеличить
Краткое описание:
30V 7A N-CH MOSFET, 32mR Rds(on), PPAK SC75-6L
Дополнительная информация
N-channel MOSFET with 30V drain-source voltage and 7A continuous drain current. Features low 32mΩ drain-source resistance and 13W maximum power dissipation. Surface-mount TO-236-3 package with 1.6mm length, 1.6mm width, and 0.75mm height. Operates from -55°C to 150°C, with fast switching times including 9ns fall time and 13ns turn-on/off delay. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.6mm |
| Height | 0.75mm |
| Length | 1.6mm |
| Series | TrenchFET® |
| Weight | 0.003386oz |
| Polarity | N-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 40mR |
| Package/Case | TO-236-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 350pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 13ns |
| Max Power Dissipation | 13W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 32mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Voltage (Vdss) | 30V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
