SIB422EDK-T1-GE3
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Краткое описание:
N-CHANNEL TrenchFET MOSFET 20V 9A 13W Surface Mount
Дополнительная информация
The SIB422EDK-T1-GE3 is a surface mount N-CHANNEL TrenchFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 13W and a continuous drain current of 9A. The device has a drain to source voltage of 20V and a gate to source voltage of 8V. It is lead free and RoHS compliant, with a threshold voltage of 1V and a drain to source resistance of 82mR.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.003386oz |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 30mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Threshold Voltage | 1V |
| Number of Channels | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 13W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 82mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 30mR |
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