SIB456DK-T1-GE3
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Краткое описание:
N-CH Power MOSFET 100V 6.3A PowerPAK SC-75 SMT
Дополнительная информация
N-channel Power MOSFET, TrenchFET technology, 100V drain-source voltage, 6.3A continuous drain current. Features a 6-pin PowerPAK SC-75 surface-mount package with no leads, measuring 1.6mm x 1.6mm x 0.75mm. Offers a maximum power dissipation of 2400mW and operates between -55°C and 150°C. Includes a 3V gate threshold voltage and 185mOhm maximum drain-source resistance at 10V.
| PCB | 6 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 18612 |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | No Lead |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | PowerPAK SC-75 |
| AEC Qualified | No |
| Configuration | Single Quad Drain |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 0.5 |
| Package Material | Plastic |
| Basic Package Type | Non-Lead-Frame SMT |
| Package Width (mm) | 1.6 |
| Process Technology | TrenchFET |
| Package Height (mm) | 0.75(Max) |
| Package Length (mm) | 1.6 |
| Seated Plane Height (mm) | 0.75 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 2400mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 3.3nC |
| Typical Gate Charge @ Vgs | 3.3@10V|[email protected]nC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Threshold Voltage | 3V |
| Maximum Drain Source Resistance | 185@10VmOhm |
| Typical Input Capacitance @ Vds | 130@50VpF |
| Maximum Continuous Drain Current | 6.3A |
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