SIB912DK-T1-GE3
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Краткое описание:
20V 1.5A N-CH MOSFET, 180mR Rds On, Dual Channel, SM
Дополнительная информация
Dual N-Channel MOSFET, TrenchFET® series, featuring 20V Drain to Source Voltage (Vdss) and 1.5A Continuous Drain Current (ID). Offers low 180mR Drain to Source Resistance and 216mR Rds On Max. Surface mountable with a compact 1.6mm x 1.6mm x 0.75mm footprint, operating from -55°C to 150°C. Includes fast switching characteristics with 5ns Turn-On Delay Time and 10ns Fall Time. Packaged in Tape and Reel, RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.6mm |
| Height | 0.75mm |
| Length | 1.6mm |
| Series | TrenchFET® |
| Weight | 0.003386oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Packaging | Tape and Reel |
| Rds On Max | 216mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 95pF |
| Threshold Voltage | 400mV |
| Number of Channels | 2 |
| Turn-On Delay Time | 5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 24ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 3.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 180mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 1.5A |
| Drain to Source Voltage (Vdss) | 20V |
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