SIC779CD-T1-GE3

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SIC779CD-T1-GE3 - Vishay(Siliconix)
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Краткое описание: DrMOS Gate Driver IC, 16V, 40A, 8ns Fall Time, PWM Interface
Производитель Vishay(Siliconix)
Статус производства Производится (ACTIVE)

Дополнительная информация

High-performance DrMOS power stage featuring a single gate driver and single output, capable of delivering 40A output current. This surface mount component operates from a 3V to 16V supply voltage range and offers a maximum power dissipation of 25W. Key specifications include an 8ns fall time, 20ns turn-off delay time, and integrated over-temperature fault protection. The device utilizes a PWM interface and is packaged in a 40-pin PowerPAK MLP66 on tape and reel.
RoHS Compliant
Mount Surface Mount
Length 6mm
Fall Time 8ns
Interface PWM
Lead Free Lead Free
Packaging Tape and Reel
Output Current 40A
Output Voltage 5V
RoHS Compliant Yes
Fault Protection Over Temperature
Package Quantity 3000
Number of Drivers 1
Number of Outputs 1
Max Supply Voltage 16V
Min Supply Voltage 3V
Turn-Off Delay Time 20ns
Reach SVHC Compliant No
Max Power Dissipation 25W
Operating Supply Current 600uA
Max Operating Temperature 125°C
Min Operating Temperature -40°C
Output Current per Channel 40A

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