SIDR170DP-T1-RE3
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Краткое описание:
N-Channel 100 V (D-S) MOSFET, 100 A, PowerPAK SO-8DC
Дополнительная информация
An N-channel 100 V MOSFET featuring TrenchFET Gen IV technology with top-side cooling. It is designed with optimized Qg, Qgd, and Qgd/Qgs ratio to reduce switching related power loss and is 100% Rg and UIS tested.
| RoHS | Compliant |
| Lead-free | Yes |
| Halogen-free | Yes |
| Configuration | Single |
| Typical Gate Charge (Qg) | 40nC |
| Drain-Source Voltage (VDS) | 100V |
| Typical Gate Resistance (Rg) | 1.2Ω |
| Continuous Drain Current (ID) | 100A |
| RDS(on) Max or Typ @ VGS = 10 V | 0.0051Ω |
| Gate Threshold Voltage (VGS(th)) Max | 2.8V |