An N-channel metal-oxide semiconductor field-effect transistor (MOSFET) designed for high-efficiency power conversion. It features ThunderFET technology for low on-resistance and is optimized for low gate charge and increased power density in a PowerPAK SO-8 package.
| RoHS |
Compliant |
| Halogen-free |
Yes |
| Gate Charge (Qg) Typ |
41nC |
| Rds(on) Max @ Vgs=10V |
17.7mΩ |
| Gate-Source Voltage (Vgs) |
±20V |
| Drain-Source Voltage (Vdss) |
150V |
| Operating Temperature Range |
-55 to 150°C |
| Power Dissipation (Pd) @ Tc=25°C |
104W |
| Continuous Drain Current (Id) @ Tc=25°C |
51.6A |