SIDR626LEP-T1-RE3
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Краткое описание:
N-Channel 60 V (D-S) MOSFET, 100A, 1.45mOhm @ 10V, PowerPAK SO-8DC
Дополнительная информация
The SIDR626LEP is a TrenchFET Gen IV power MOSFET designed for high efficiency power conversion. It features a very low drain-to-source on-resistance and is tuned for low gate charge (Qg) and output charge (Qoss) figure-of-merit. The device is 100% Rg and UIS tested, suitable for synchronous rectification, primary-side switches, and DC/DC converters.
| RoHS | Compliant |
| Halogen-free | Yes |
| Gate Charge (Qg) | 51nC |
| RDS(on) at Vgs=10V | 0.00145Ohm |
| RDS(on) at Vgs=4.5V | 0.00200Ohm |
| Power Dissipation (Pd) | 125W |
| Gate-Source Voltage (Vgs) | 20V |
| Operating Temperature Max | 150°C |
| Drain-Source Voltage (Vds) | 60V |
| Continuous Drain Current (Id) | 100A |