SIE808DF-T1-E3
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Краткое описание:
N-CH MOSFET 20V 45A 1.6mR TrenchFET Surface Mount
Дополнительная информация
N-channel MOSFET, 20V Vdss, 45A continuous drain current, and 1.6mR drain-source on-resistance. Features 125W max power dissipation, 150°C max operating temperature, and 2.3V threshold voltage. Surface mountable in a 6.15mm x 5.16mm x 0.8mm package, this component offers fast switching with 10ns fall time, 25ns turn-on delay, and 55ns turn-off delay. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.16mm |
| Height | 0.8mm |
| Length | 6.15mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.6R |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 8.8nF |
| Threshold Voltage | 2.3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 25ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 55ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 125W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.6mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 45A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 1.6mR |
