SIHB12N65E-GE3
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Краткое описание:
N-CHANNEL MOSFET 650V 12A 380mR 150°C Surface Mount
Дополнительная информация
The SIHB12N65E-GE3 is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 156W and a continuous drain current of 12A. The device has a drain to source resistance of 392mR and a drain to source voltage of 650V. It is packaged in a TO-263-3 case and is available in a tape and reel packaging with 1000 units per package.
| RoHS | Compliant |
| Mount | Surface Mount |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 18ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 380mR |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 1.224nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 16ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 156W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 392mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 650V |
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