SIHB22N60E-GE3
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Краткое описание:
600V 21A N-Channel MOSFET D2PAK 180mR RdsOn
Дополнительная информация
N-Channel Power MOSFET, 600V Vdss, 21A Continuous Drain Current (ID), and 180mR Drain-to-Source On-Resistance. This silicon Metal-Oxide-Semiconductor FET features a D2PAK package for surface mounting, with a maximum power dissipation of 227W. Key switching characteristics include a 18ns turn-on delay and 54ns fall time. Operating temperature range is -55°C to 150°C, and the component is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 54ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 180mR |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 1.92nF |
| Power Dissipation | 227W |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 18ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 59ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 227W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 180mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 180mR |
