SIHB22N60S-E3
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Краткое описание:
600V 22A N-Channel Power MOSFET TO-263 Surface Mount
Дополнительная информация
N-channel power MOSFET with a 600V drain-source breakdown voltage and 22A continuous drain current. Features a low 190mΩ maximum drain-source on-resistance and 250W maximum power dissipation. Designed for surface mounting in a TO-263-3 package, this RoHS compliant component offers fast switching speeds with turn-on delay of 24ns and fall time of 59ns. Operates across a wide temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | N-CHANNEL |
| Fall Time | 59ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 190mR |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 2.81nF |
| Power Dissipation | 227W |
| Threshold Voltage | 2V |
| Turn-On Delay Time | 24ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 77ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 250W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 180mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 22A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 190mR |
| Drain to Source Breakdown Voltage | 600V |
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