SIHB33N60E-GE3
Производится
Увеличить
Краткое описание:
600V 33A N-Channel MOSFET, D2PAK, 99mR Rds(on)
Дополнительная информация
N-Channel Power MOSFET, 600V Vdss, 33A continuous drain current, and 99mΩ Rds On. This silicon, metal-oxide semiconductor field-effect transistor features a D2PAK surface-mount package, 278W max power dissipation, and operates from -55°C to 150°C. Key switching characteristics include a 56ns turn-on delay, 150ns turn-off delay, and 80ns fall time, with a 2V threshold voltage and 3.508nF input capacitance. RoHS compliant and HALOGEN FREE.
| RoHS | Compliant |
| Mount | Surface Mount |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 80ns |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Rds On Max | 99mR |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 3.508nF |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Turn-On Delay Time | 56ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 150ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 278W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 99mR |
| Gate to Source Voltage (Vgs) | 4V |
| Continuous Drain Current (ID) | 33A |
| Drain to Source Voltage (Vdss) | 600V |
