SIHB6N65E-GE3
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Краткое описание:
650V 7A N-Ch MOSFET 600mR TO-263 Surface Mount
Дополнительная информация
N-Channel Power MOSFET designed for high voltage applications. Features a 650V drain-to-source breakdown voltage and a maximum continuous drain current of 7A. Offers a low on-resistance of 600mΩ at 10V gate-source voltage. This surface-mount device boasts fast switching speeds with turn-on delay time of 14ns and fall time of 20ns. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 78W. RoHS compliant and packaged in tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 600mR |
| Package/Case | TO-263 |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 820pF |
| Power Dissipation | 78W |
| Threshold Voltage | 2V |
| Number of Elements | 1 |
| Turn-On Delay Time | 14ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 78W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 600mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 600mR |
| Drain to Source Breakdown Voltage | 650V |
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