SIHD6N65E-GE3
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Краткое описание:
650V N-Ch MOSFET, 7A, 600mR, DPAK, Surface Mount Power
Дополнительная информация
N-Channel Power MOSFET, DPAK package, offering 650V drain-to-source voltage and 7A continuous drain current. Features 600mR drain-to-source resistance, 78W maximum power dissipation, and 820pF input capacitance. Operates across a -55°C to 150°C temperature range with fast switching characteristics including 14ns turn-on delay and 20ns fall time. This RoHS compliant component is designed for surface mount applications.
| RoHS | Compliant |
| Mount | Surface Mount, Through Hole |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 600mR |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 820pF |
| Power Dissipation | 78W |
| Threshold Voltage | 2V |
| Number of Elements | 1 |
| Turn-On Delay Time | 14ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 78W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 600mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Voltage (Vdss) | 650V |
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