SIHD7N60E-GE3
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Краткое описание:
600V 7A N-CH Power MOSFET, DPAK, TO-252
Дополнительная информация
N-channel enhancement mode power MOSFET in a 3-pin DPAK (TO-252AA) surface mount package. Features a maximum drain-source voltage of 600V and a continuous drain current of 7A. Offers a low drain-source on-resistance of 600mΩ at 10V. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 78W. Package dimensions are 6.73mm(L) x 6.22mm(W) x 2.38mm(H).
| PCB | 2 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-252AA |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 18612 |
| Pin Count | 3 |
| Automotive | No |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | DPAK |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.28 |
| Package Material | Plastic |
| Package Weight (g) | 0.3 |
| Package Width (mm) | 6.22(Max) |
| Package Description | Deca Watt Package |
| Package Family Name | TO-252 |
| Package Height (mm) | 2.38(Max) |
| Package Length (mm) | 6.73(Max) |
| Seated Plane Height (mm) | 2.51(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 78000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 20nC |
| Typical Gate Charge @ Vgs | 20@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 600@10VmOhm |
| Typical Input Capacitance @ Vds | 680@100VpF |
| Maximum Continuous Drain Current | 7A |
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