SIHF12N60E-E3
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Краткое описание:
600V 12A N-Channel MOSFET TO-220AB 380mR
Дополнительная информация
N-Channel Power MOSFET, 600V Vdss, 12A Continuous Drain Current (ID), and 380mΩ Max Drain-Source On Resistance (Rds On). This silicon, metal-oxide semiconductor FET features a TO-220-3 through-hole package, 33W power dissipation, and operating temperatures from -55°C to 150°C. Key switching characteristics include a 14ns turn-on delay, 35ns turn-off delay, and 19ns fall time, with an input capacitance of 937pF. This component is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Weight | 0.211644oz |
| Polarity | N-CHANNEL |
| Fall Time | 19ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 380mR |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 937pF |
| Power Dissipation | 33W |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 14ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 33W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 380mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 380mR |
