SIHG20N50C-E3

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SIHG20N50C-E3 - Vishay(Siliconix)
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Краткое описание: 500V 20A N-CH MOSFET TO-247AC
Производитель Vishay(Siliconix)
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel MOSFET transistor for through-hole mounting in a TO-247-3 package. Features a 500V drain-to-source voltage and 20A continuous drain current. Offers a low drain-to-source resistance of 225mR at a nominal gate-source voltage of 5V. Maximum power dissipation is 292W, with operating temperatures ranging from -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 80ns and fall time of 44ns.
RoHS Compliant
Mount Through Hole
Height 24.99mm
Weight 1.340411oz
Polarity N-CHANNEL
Fall Time 44ns
Packaging Rail/Tube
Rds On Max 270mR
Nominal Vgs 5V
Package/Case TO-247-3
RoHS Compliant Yes
Package Quantity 500
Input Capacitance 2.942nF
Threshold Voltage 5V
Number of Channels 1
Turn-On Delay Time 80ns
Radiation Hardening No
Turn-Off Delay Time 32ns
Reach SVHC Compliant Unknown
Max Power Dissipation 292W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 225mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 20A
Drain to Source Voltage (Vdss) 500V

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