SIHG22N50D-GE3
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Краткое описание:
N-Channel MOSFET, 500V, 22A, 230mR, TO-247AC
Дополнительная информация
N-channel MOSFET transistor featuring 500V drain-to-source voltage and 22A continuous drain current. Offers a low 0.185 ohm drain-to-source resistance at 10V gate-to-source voltage, with a 3V threshold voltage. Designed for through-hole mounting in a TO-247AC package, this component boasts a maximum power dissipation of 312W and operates within a temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 21ns and fall time of 40ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5.31mm |
| Height | 20.82mm |
| Length | 15.87mm |
| Weight | 1.340411oz |
| Polarity | N-CHANNEL |
| Fall Time | 40ns |
| Packaging | Rail/Tube |
| Rds On Max | 230mR |
| Package/Case | TO-247AC |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Input Capacitance | 1.938nF |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 21ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 47ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 312W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 230mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 22A |
| Drain to Source Voltage (Vdss) | 500V |
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