SIHG22N60E-E3
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Краткое описание:
600V N-Ch MOSFET 21A 180mR TO-247AC
Дополнительная информация
N-channel MOSFET with 600V drain-source voltage and 180mΩ maximum drain-source on-resistance at 10V gate-source voltage. Features a continuous drain current of 21A and a maximum power dissipation of 227W. This component offers fast switching with turn-on delay time of 18ns and fall time of 54ns. It is housed in a TO-247AC package for through-hole mounting and is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5.31mm |
| Height | 20.7mm |
| Length | 15.87mm |
| Series | E |
| Weight | 1.340411oz |
| Polarity | N-CHANNEL |
| Fall Time | 54ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 180mR |
| Package/Case | TO-247AC |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Input Capacitance | 1.92nF |
| Power Dissipation | 227W |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 18ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 59ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 227W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 180mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 180mR |
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