SIHP12N60E-GE3
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Краткое описание:
600V 12A N-CH MOSFET TO-220-3 Through Hole
Дополнительная информация
N-CHANNEL Power Field-Effect Transistor designed for through-hole mounting in a TO-220-3 package. Features a maximum drain-source voltage of 600V and a continuous drain current of 12A. Offers a low drain-source on-resistance of 380mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 147W. Includes fast switching characteristics with turn-on delay time of 14ns and fall time of 19ns.
| RoHS | Not CompliantNo |
| Mount | Through Hole |
| Weight | 0.211644oz |
| Polarity | N-CHANNEL |
| Fall Time | 19ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 380mR |
| Package/Case | TO-220-3 |
| Package Quantity | 1000 |
| Input Capacitance | 937pF |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Turn-On Delay Time | 14ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 147W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 380mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 380mR |
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