SIHP14N50D-GE3
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Краткое описание:
N-Channel MOSFET, 500V, 14A, 400mR Rds On, TO-220
Дополнительная информация
N-channel MOSFET transistor featuring 500V drain-source voltage and 14A continuous drain current. Offers 0.32 ohm drain-source resistance at 10V gate-source voltage, with a 3V threshold voltage. Designed for through-hole mounting in a TO-220-3 package, this component boasts a maximum power dissipation of 208W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 16ns turn-on delay and 26ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.65mm |
| Height | 9.01mm |
| Length | 10.51mm |
| Weight | 0.211644oz |
| Polarity | N-CHANNEL |
| Fall Time | 26ns |
| Packaging | Rail/Tube |
| Rds On Max | 400mR |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 1.144nF |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 16ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 29ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 208W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 400mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Voltage (Vdss) | 500V |
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