SIHP22N60E-GE3
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Краткое описание:
600V N-CH MOSFET, 21A, 180mR, TO-220
Дополнительная информация
N-channel power MOSFET with 600V drain-source voltage and 21A continuous drain current. Features low 180mΩ drain-source on-resistance and a maximum power dissipation of 227W. Packaged in a TO-220-3 through-hole mount, this RoHS compliant component offers fast switching with turn-on delay of 18ns and fall time of 54ns. Operating temperature range is -55°C to 150°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.65mm |
| Height | 9.01mm |
| Length | 10.51mm |
| Series | E |
| Weight | 0.211644oz |
| Polarity | N-CHANNEL |
| Fall Time | 54ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 180mR |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 1.92nF |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Turn-On Delay Time | 18ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 59ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 227W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 180mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 180mR |
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