SIHP24N65E-GE3
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Краткое описание:
650V 24A N-Channel MOSFET TO-220AB
Дополнительная информация
N-Channel Power MOSFET, 650V Vdss, 24A continuous drain current, and 145mΩ maximum drain-source on-resistance. Features a TO-220-3 through-hole package, 250W maximum power dissipation, and operates from -55°C to 150°C. Includes a 2V threshold voltage, 2.74nF input capacitance, and fast switching times with 24ns turn-on delay and 69ns fall time. This silicon metal-oxide semiconductor FET is HALOGEN FREE and ROHS COMPLIANT.
| RoHS | Not CompliantNo |
| Mount | Through Hole |
| Series | E |
| Weight | 0.211644oz |
| Polarity | N-CHANNEL |
| Fall Time | 69ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 145mR |
| Package/Case | TO-220-3 |
| Package Quantity | 1000 |
| Input Capacitance | 2.74nF |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Turn-On Delay Time | 24ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 70ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 250W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 145mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 145mR |
