SIHP30N60E-E3

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SIHP30N60E-E3 - Vishay(Intertechnologies)
Краткое описание: 600V 29A N-Channel MOSFET TO-220AB 125mR Rds(on)
Производитель Vishay(Intertechnologies)
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel Power MOSFET, 600V Drain-Source Voltage, 29A Continuous Drain Current, and 125mΩ Max Drain-Source On-Resistance. Features a 250W Max Power Dissipation and a TO-220AB through-hole package. Operates between -55°C and 150°C with a 2V Threshold Voltage. Includes 19ns Turn-On Delay Time and 36ns Fall Time. RoHS compliant.
RoHS Compliant
Mount Through Hole
Series E
Weight 0.211644oz
Polarity N-CHANNEL
Fall Time 36ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 125mR
Package/Case TO-220AB
RoHS Compliant Yes
Package Quantity 1000
Input Capacitance 2.6nF
Power Dissipation 250W
Threshold Voltage 2V
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 19ns
Radiation Hardening No
Turn-Off Delay Time 63ns
Reach SVHC Compliant Unknown
Max Power Dissipation 250W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 125mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 29A
Drain to Source Voltage (Vdss) 600V
Drain-source On Resistance-Max 125mR