SIHP6N40D-E3

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SIHP6N40D-E3 - Vishay(Siliconix)
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Краткое описание: 400V 6A N-CH MOSFET TO-220AB 1R Rds(on)
Производитель Vishay(Siliconix)
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

N-channel MOSFET with 400V drain-source voltage and 6A continuous drain current. Features 1 Ohm drain-source resistance and 104W maximum power dissipation. Packaged in TO-220-3 for through-hole mounting, this RoHS compliant component offers fast switching with turn-on delay of 12ns and fall time of 8ns. Operating temperature range from -55°C to 150°C.
RoHS Compliant
Mount Through Hole
Series E
Weight 0.211644oz
Polarity N-CHANNEL
Fall Time 8ns
Packaging Rail/Tube
Rds On Max 1R
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 1000
Input Capacitance 311pF
Power Dissipation 104W
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 12ns
Radiation Hardening No
Turn-Off Delay Time 14ns
Max Power Dissipation 104W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 1R
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 6A
Drain to Source Voltage (Vdss) 400V

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