SIHP7N60E-GE3
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Краткое описание:
600V 7A N-CH MOSFET TO-220 Power Transistor
Дополнительная информация
N-channel power MOSFET for general-purpose applications. Features a 600V drain-to-source voltage (Vdss) and a continuous drain current (ID) of 7A. Offers a low 600mΩ drain-to-source resistance (Rds On) and a threshold voltage of 2V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 78W. Packaged in a TO-220-3 through-hole mount, this RoHS compliant component boasts fast switching times with a fall time of 14ns and turn-off delay of 24ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Weight | 0.211644oz |
| Polarity | N-CHANNEL |
| Fall Time | 14ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 600mR |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 680pF |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 24ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 78W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 600mR |
| Gate to Source Voltage (Vgs) | 4V |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Voltage (Vdss) | 600V |
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