SIHW47N60E-GE3
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Краткое описание:
600V 47A N-Channel MOSFET TO-247AD 64mR
Дополнительная информация
N-Channel Power MOSFET, 600V Drain-Source Voltage, 47A Continuous Drain Current, and 64mΩ Max Drain-Source On-Resistance. Features a 2.5V Threshold Voltage, 9.62nF Input Capacitance, 50ns Turn-On Delay, and 140ns Turn-Off Delay. This silicon Metal-oxide Semiconductor FET is housed in a TO-247AD through-hole package, offering a Max Power Dissipation of 357W and operating from -55°C to 150°C. It is RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Weight | 1.340411oz |
| Polarity | N-CHANNEL |
| Fall Time | 26ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 64mR |
| Package/Case | TO-247AD |
| RoHS Compliant | Yes |
| Package Quantity | 480 |
| Input Capacitance | 9.62nF |
| Threshold Voltage | 2.5V |
| Number of Channels | 1 |
| Turn-On Delay Time | 50ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 140ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 357W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 64mR |
| Gate to Source Voltage (Vgs) | 4V |
| Continuous Drain Current (ID) | 47A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 64mR |
