SIJ458DP-T1-GE3
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Краткое описание:
VISHAY - SIJ458DP-T1-GE3 - MOSFET,N CH,DIODE,30V,60A,PPAKSO8L
Дополнительная информация
VISHAY - SIJ458DP-T1-GE3 - MOSFET,N CH,DIODE,30V,60A,PPAKSO8L
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 24ns |
| Packaging | Tape and Reel |
| Rds On Max | 2.2mR |
| Nominal Vgs | 1V |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 4.81nF |
| Power Dissipation | 5W |
| Threshold Voltage | 1V |
| Number of Channels | 1 |
| Turn-On Delay Time | 38ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 49ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Voltage (Vdss) | 30V |
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