SIJ482DP-T1-GE3
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Краткое описание:
80V 60A N-CH MOSFET, 6.2mR Rds On, Power Transistor
Дополнительная информация
N-Channel Power MOSFET featuring 80V drain-source breakdown voltage and 60A continuous drain current. Offers low 6.2mR drain-source on-resistance at a 10V gate-source voltage. Designed for surface mount and through-hole applications with a maximum power dissipation of 69.4W. Operates across a wide temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount, Through Hole |
| Width | 4.47mm |
| Height | 1.14mm |
| Length | 5mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 6.2mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 2.425nF |
| Power Dissipation | 69.4W |
| Threshold Voltage | 1.5V |
| Turn-On Delay Time | 28ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 72ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 69.4W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6.2mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Voltage (Vdss) | 80V |
| Drain-source On Resistance-Max | 9.5MR |
| Drain to Source Breakdown Voltage | 80V |
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