SIR404DP-T1-GE3
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Краткое описание:
20V 45.6A N-CH MOSFET 1.6mR PPAK SO-8
Дополнительная информация
N-channel MOSFET with 20V drain-source voltage and 45.6A continuous drain current. Features low 1.6mR drain-to-source resistance and 104W maximum power dissipation. Surface mountable in a PPAK SO-8 package, this component offers fast switching with turn-on delay of 35ns and fall time of 26ns. Operating temperature range from -55°C to 150°C, with RoHS compliance.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.15mm |
| Height | 1.04mm |
| Length | 6.15mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 26ns |
| Packaging | Tape and Reel |
| Rds On Max | 1.6mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 8.13nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 35ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 123ns |
| Max Power Dissipation | 104W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.6mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 45.6A |
| Drain to Source Voltage (Vdss) | 20V |
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