SIR412DP-T1-GE3
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Краткое описание:
N-CHANNEL TrenchFET MOSFET 25V 20A 15.6W Surface Mount
Дополнительная информация
The SIR412DP-T1-GE3 is a surface mount N-CHANNEL TrenchFET MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 15.6W and a continuous drain current of 20A. The device has a drain to source resistance of 10mR and a gate to source voltage of 20V. It is RoHS compliant and packaged in tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Packaging | Tape and Reel |
| Rds On Max | 12mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 600pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 13ns |
| Max Power Dissipation | 15.6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 10mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 25V |
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