SIR414DP-T1-GE3
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Краткое описание:
40V 50A N-CH MOSFET 2.8mR PPAK SO-8
Дополнительная информация
N-channel MOSFET with 40V drain-source voltage and 50A continuous drain current. Features low 2.3mR drain-source on-resistance and 2.8mR max Rds On. Operates from -55°C to 150°C with 83W max power dissipation. Surface mount PPAK SO-8 package, 1.04mm height, 4.9mm length, 5.89mm width. RoHS compliant with 33ns turn-on and 42ns turn-off delay times.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 13ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 2.8mR |
| Nominal Vgs | 1V |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 4.75nF |
| Threshold Voltage | 1V |
| Number of Channels | 1 |
| Turn-On Delay Time | 33ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 42ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 83W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.3mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 2.8mR |
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