SIR422DP-T1-GE3
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Краткое описание:
N-CH MOSFET 40V 40A 6.6mR TO-262 PowerPAK
Дополнительная информация
N-channel MOSFET transistor featuring a 40V drain-source voltage and 40A continuous drain current. Offers a low 6.6mΩ drain-source on-resistance and 1.785nF input capacitance. Designed for efficient switching with turn-on delay of 19ns and fall time of 11ns. Housed in a PowerPAK SO package, this component supports both through-hole and surface mount configurations, operating across a wide temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Through Hole, Surface Mount |
| Width | 0.197inch |
| Height | 0.042inch |
| Length | 0.235inch |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 11ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 6.6mR |
| Nominal Vgs | 1.2V |
| Package/Case | TO-262-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 1.785nF |
| Power Dissipation | 5W |
| Threshold Voltage | 1.2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 19ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 28ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 34.7W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6.6mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 6.6mR |
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