SIR438DP-T1-GE3
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Краткое описание:
N-CH MOSFET 25V 60A 1.9mR PowerPAK SO-8 SM
Дополнительная информация
N-channel MOSFET transistor featuring 25V drain-source voltage and 60A continuous drain current. Offers low 1.9mΩ drain-to-source resistance and 83W maximum power dissipation. Designed for surface mounting with a compact 4.9mm length, 5.89mm width, and 1.04mm height. Includes fast switching characteristics with turn-on delay of 37ns and fall time of 20ns. RoHS compliant and operates within a -55°C to 150°C temperature range.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.8mR |
| Nominal Vgs | 1V |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 4.56nF |
| Power Dissipation | 5.4W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 37ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 41ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 83W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.9mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Voltage (Vdss) | 25V |
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