SIR440DP-T1-GE3
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Краткое описание:
N-CH MOSFET 20V 60A 1.55mR Surface Mount
Дополнительная информация
N-channel PowerPAK SO MOSFET with 20V Vdss and 60A continuous drain current. Features low 1.55mR drain-source on-resistance and 2.5V threshold voltage. Designed for surface mount applications with a 4.9mm length, 5.89mm width, and 1.04mm height. Operating temperature range from -55°C to 150°C, with 6.25W max power dissipation. RoHS compliant and supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 48ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.55mR |
| Nominal Vgs | 2.5V |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 6nF |
| Threshold Voltage | 2.5V |
| Number of Channels | 1 |
| Turn-On Delay Time | 45ns |
| Turn-Off Delay Time | 81ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 6.25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.55mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 1.55mR |
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