SIR460DP-T1-GE3
Не рекомендуется для новых проектов
Увеличить
Краткое описание:
30V 40A N-CH MOSFET, 4.9mR RdsOn, PPAK 8SOIC
Дополнительная информация
N-channel MOSFET with 30V drain-source voltage and 40A continuous drain current. Features low 4.9mΩ drain-to-source resistance and 1V gate-source threshold voltage. Packaged in a TO-252-3 surface-mount package with a maximum power dissipation of 5W. Operates from -55°C to 150°C and offers fast switching with turn-on delay of 25ns and fall time of 12ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 4.7mR |
| Nominal Vgs | 1V |
| Package/Case | TO-252-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 2.071nF |
| Threshold Voltage | 1V |
| Number of Channels | 1 |
| Turn-On Delay Time | 25ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 28ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.9mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Voltage (Vdss) | 30V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
