SIR466DP-T1-GE3
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Краткое описание:
30V 40A N-CH MOSFET SOIC 3.5mR PowerPAK
Дополнительная информация
N-channel MOSFET, 30V Vds, 40A continuous drain current, and 3.5mΩ maximum drain-source on-resistance. Features a 2.4V threshold voltage and 20V gate-source voltage rating. Surface mountable in an 8-pin PowerPAK SO package with dimensions of 5.89mm width, 4.9mm length, and 1.04mm height. Offers a maximum power dissipation of 54W and operates within a temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 30ns and fall time of 9ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3.5mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 2.73nF |
| Threshold Voltage | 2.4V |
| Number of Channels | 1 |
| Turn-On Delay Time | 30ns |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 54W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 3.5mR |
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