SIR472DP-T1-GE3
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Краткое описание:
30V 20A N-CH MOSFET, 12mR Rds(on), SOIC, Surface Mount
Дополнительная информация
N-channel MOSFET transistor designed for surface mount applications. Features a 30V drain-source voltage and a continuous drain current of 20A. Offers a low drain-source on-resistance of 12mR at a 10V gate-source voltage. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 3.9W. Packaged in an 8-pin PowerPAK SO format, this RoHS compliant component is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 12mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 820pF |
| Threshold Voltage | 2.5V |
| Number of Channels | 1 |
| Turn-On Delay Time | 16ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 16ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 3.9W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 12.2mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 12mR |
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