SIR476DP-T1-GE3
Производится
Увеличить
Краткое описание:
25V 60A N-CH MOSFET, 1.75mR Rds On, SOIC
Дополнительная информация
N-channel MOSFET with 25V drain-source voltage and 60A continuous drain current. Features low 1.75mΩ drain-to-source resistance and 2.5V threshold voltage. Operates across a -55°C to 150°C temperature range with a maximum power dissipation of 6.25W. Packaged in a surface-mount SOIC with dimensions of 4.9mm length, 5.89mm width, and 1.04mm height. Includes fast switching times with turn-on delay of 50ns and fall time of 48ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 48ns |
| Packaging | Tape and Reel |
| Rds On Max | 1.7mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 6.15nF |
| Threshold Voltage | 2.5V |
| Number of Channels | 1 |
| Turn-On Delay Time | 50ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 60ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 6.25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.75mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Voltage (Vdss) | 25V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
