SIR484DP-T1-GE3
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Краткое описание:
N-CH MOSFET 20V 20A 8.3mR TO-252 SM
Дополнительная информация
N-CHANNEL MOSFET, 20V Vdss, 20A continuous drain current, and 8.3mR maximum drain-source on-resistance. This surface mount component features a 29.8W maximum power dissipation and operates within a temperature range of -55°C to 150°C. Packaged in a TO-252-3 case, it offers fast switching with turn-on delay times of 15ns and fall times of 10ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 8.3mR |
| Package/Case | TO-252-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 830pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 17ns |
| Max Power Dissipation | 29.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 9.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 8.3mR |
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